Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)

US10109534B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Adam Brand · Palo Alto, US
• Naomi Yoshida · Sunnyvale, US
• Seshadri Ganguli · Sunnyvale, US
• David Thompson · San Jose, US
• Mei Chang · Saratoga, US

Key dates

• Filing date: Feb 20, 2015
• Grant date: Oct 23, 2018
• Expiry date: Feb 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the first work function layer and the second feature.