Measuring device and method for measuring layer thicknesses and defects in a wafer stack
US10109538B2 · kind B2 · utility
2Cited by
17References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 12, 2010 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67288
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a measurement means and a method for measuring and/or acquiring layer thicknesses and/or voids of one or more layers of a wafer stack on a plurality of measuring points distributed on the wafer stack and a corresponding wafer processing device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.