Active contact and gate contact interconnect for mitigating adjacent gate electrode shortages
US10109636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an active contact-gate contact interconnect including forming a first gate contact to a first gate electrode in an active region in a substrate, forming a first active contact to another portion of the first active region. The first gate contact and the first active contact include an approximately equal surface area, and forming an interconnect between the first active contact and the first gate contact. The interconnect includes a first metal wire in a first metal layer electrically connecting the first active contact to the first gate contact. The method may also include forming a second metal wire in the first metal layer configured to electrically connect a third metal wire in a second metal layer to an external contact to a second active region in the substrate, the external contact including the approximately equal surface area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.