Youngtag Woo
24Patents
8h-index
29Co-inventors
71Inventor score
Filing activity: Nov 16, 2004 → Sep 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8889561B2 | Double sidewall image transfer process | Electricity | 39 | Active |
| US9711511B1 | Vertical channel transistor-based semiconductor memory structure | Electricity | 22 | Active |
| US9406775B1 | Method for creating self-aligned compact contacts in an IC device meeting fabrication spacing constraints | Electricity | 21 | Active |
| US9184169B2 | Methods of forming FinFET devices in different regions of an integrated circuit product | Electricity | 17 | Active |
| US10236215B1 | Methods of forming gate contact structures and cross-coupled contact structures for transistor devices | Electricity | 13 | Active |
| US9324722B1 | Utilization of block-mask and cut-mask for forming metal routing in an IC device | Electricity | 12 | Active |
| US9105510B2 | Double sidewall image transfer process | Electricity | 12 | Active |
| US9437481B2 | Self-aligned double patterning process for two dimensional patterns | Electricity | 8 | Active |
| US9627389B1 | Methods to form merged spacers for use in fin generation in IC devices | Electricity | 6 | Active |
| US10770388B2 | Transistor with recessed cross couple for gate contact over active region integration | Electricity | 6 | Active |
| US9406616B2 | Merged source/drain and gate contacts in SRAM bitcell | Electricity | 5 | Active |
| US9472464B1 | Methods to utilize merged spacers for use in fin generation in tapered IC devices | Electricity | 5 | Active |
| US10651284B2 | Methods of forming gate contact structures and cross-coupled contact structures for transistor devices | Electricity | 4 | Active |
| US12002869B2 | Gate contact structures and cross-coupled contact structures for transistor devices | Electricity | 2 | Active |
| US9466604B2 | Metal segments as landing pads and local interconnects in an IC device | Electricity | 2 | Active |
| US10204861B2 | Structure with local contact for shorting a gate electrode to a source/drain region | Electricity | 2 | Active |
| US9268897B2 | Method for increasing the robustness of a double patterning router used to manufacture integrated circuit devices | Emerging Cross-Sectional Technologies | 2 | Active |
| US10629701B1 | Self-aligned gate cut method and multilayer gate-cut pillar structure | Electricity | 2 | Active |
| US7388262B2 | Nitrogen implementation to minimize device variation | Electricity | 1 | Expired |
| US10109636B2 | Active contact and gate contact interconnect for mitigating adjacent gate electrode shortages | Electricity | 1 | Active |
| US11469309B2 | Gate contact structures and cross-coupled contact structures for transistor devices | Electricity | 0 | Active |
| US10490455B2 | Gate contact structures and cross-coupled contact structures for transistor devices | Electricity | 0 | Active |
| US8962483B2 | Interconnection designs using sidewall image transfer (SIT) | Electricity | 0 | Active |
| US10714591B2 | Gate structure for a transistor device with a novel pillar structure positioned thereabove | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.