Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrate
US10109638B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Oct 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with embedded non-volatile memory (eNVM) is described. The device is formed on a silicon-on-insulator (SOI) substrate, such as a fully depleted SOI (FDSOI) substrate. The substrate includes a SOI region and a hybrid region. The SOI region includes the surface substrate, BOX and bulk substrate while the hybrid region includes only the bulk substrate. NVM and high voltage (HV) transistors are disposed in the hybrid region while a logic and radio frequency (RF) transistors are disposed in the SOI region. The gates of the various transistors have about coplanar top surfaces. As such, the hybrid region compensates for height differential of transistors, enabling transistors to have about coplanar top surfaces. In addition, the hybrid region enables transistors which suffer from floating body effects to be disposed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.