Inventor · Singapore, SG

Pinghui Li

16Patents
3h-index
28Co-inventors
52Inventor score

Filing activity: Nov 25, 2015 → Nov 5, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9583499B1 Devices with embedded non-volatile memory and metal gates and methods for fabricating the same Electricity 15 Active
US10211336B2 LDMOS transistor structures and integrated circuits including LDMOS transistor structures Electricity 3 Active
US9780231B1 Integrated circuits with flash memory and methods for producing the same Electricity 3 Active
US9793394B1 Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures Electricity 3 Active
US9825185B1 Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structures Electricity 2 Active
US9698200B2 Magnetism-controllable dummy structures in memory device Electricity 2 Active
US10109638B1 Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrate Electricity 1 Active
US10381360B1 Control gate dummy for word line uniformity and method for producing the same Electricity 1 Active
US10741552B2 Method and device for embedding flash memory and logic integration in FinFET technology Electricity 0 Active
US10163901B1 Method and device for embedding flash memory and logic integration in FinFET technology Electricity 0 Active
US11545570B2 High-voltage devices integrated on semiconductor-on-insulator substrate Electricity 0 Active
US10978510B2 Memory device with density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology Electricity 0 Active
US10374005B2 Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same Electricity 0 Active
US9929165B1 Method for producing integrated circuit memory cells with less dedicated lithographic steps Electricity 0 Active
US12124787B2 System and method for automatic generation of device-based design rules and corresponding design rule checking (DRC) codes Physics 0 Active
US10411027B2 Integrated circuits with memory cells and method for producing the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.