Wordline sidewall recess for integrating planar selector device
US10109679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Feb 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods for fabricating a non-volatile memory with integrated selector devices (or steering devices) are described. Each memory cell within a memory array may be placed in series with a selector device, such as a diode or other non-linear current-voltage device, in order to reduce leakage currents through unselected memory cells during a memory operation. In some cases, fabricating a selector device within a memory hole region may be difficult due to the dimensions of the selector device. A wordline sidewall recess process or a wordline sidewall recess with a replacement metal gate process may be used to integrate selector devices with memory cells outside of the memory hole region. By fabricating non-linear selector devices outside of the memory hole region, the area of the memory array may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.