Fin field effect transistor

US10109739B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Hua Kuan · Kaohsiung, TW
• Chen-Chieh Chiang
• Chi-Cherng Jeng · Tainan, TW

Key dates

• Filing date: Apr 15, 2016
• Grant date: Oct 23, 2018
• Expiry date: Jun 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/125

Abstract

A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate comprises a plurality of trenches and at least one semiconductor fin between the trenches, wherein the semiconductor fin comprises at least one groove, and the at least one groove is located on a top surface of the semiconductor fin. The insulators are disposed in the trenches. The gate stack partially covers the semiconductor fin, the at least one groove and the insulators.