Method and apparatus for uniformly metallization on substrate
US10113244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D17/001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.