Method and recording medium of reducing chemoepitaxy directed self-assembled defects
US10114921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to an edge of the first external dummy is greater than a first distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.