Semiconductor device and method for manufacturing the same
US10115582B2 · kind B2 · utility
1Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 5, 2015 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3171
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.