Semiconductor package having a variable redistribution layer thickness

US10115668B2 · kind B2 · utility

Assignee

• Intel IP Corporation · US

Inventors

• Klaus Reingruber · Langquaid, DE
• Sven Albers · Regensburg, DE
• Christian Geissler · Teugn, DE
• Georg Seidemann · Landshut, DE
• Bernd Waidhas · Nittendorf, DE
• Thomas Wagner · Regelsbach, DE
• Marc Dittes · Regensburg, DE

Key dates

• Filing date: Dec 15, 2015
• Grant date: Oct 30, 2018
• Expiry date: May 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.