Solder metallization stack and methods of formation thereof

US10115688B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Kamil Karlovsky · Villach, AT
• Evelyn Napetschnig · Diex, AT
• Michael Ehmann · Villach, AT
• Mark Harrison · Wernberg, AT
• Anton Pugatschow · Soest, DE

Key dates

• Filing date: May 29, 2015
• Grant date: Oct 30, 2018
• Expiry date: May 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/04953
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.