Method for direct adhesion via low-roughness metal layers
US10115698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2015 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20102
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for assembling a first substrate and a second substrate via metal adhesion layers, the method including: depositing, on a surface of each of the first and second substrates, a metal layer with a thickness controlled to limit surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at an end of the depositing. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.