Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof
US10115735B2 · kind B2 · utility
24Cited by
54References
9Claims
0Family size
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Key dates
| Filing date | Jun 8, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jun 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02244
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.