Semiconductor device having a superjunction structure
US10115812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Sep 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
A semiconductor device includes a drift region of a first conductivity type, an anode region of a second conductivity type situated below the drift region, an inversion region of the second conductivity type situated above the drift region, an enhancement region of the first conductivity type situated between the drift region and the inversion region, first and second control trenches extending through the inversion region and the enhancement region into the drift region, each control trench being bordered by a cathode diffusion region of the first conductivity type, and a superjunction structure situated in the drift region between the first and the second control trenches so that the superjunction structure does not extend under either the first or the second control trench. The superjunction structure is separated from the inversion region by the enhancement region and includes alternating regions of the first and the second conductivity types.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.