Chiu Ng
35Patents
7h-index
15Co-inventors
66Inventor score
Filing activity: Jun 18, 1996 → Sep 1, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6482681B1 | Hydrogen implant for buffer zone of punch-through non epi IGBT | Electricity | 79 | Expired |
| US5766966A | Power transistor device having ultra deep increased concentration region | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6707111B2 | Hydrogen implant for buffer zone of punch-through non EPI IGBT | Electricity | 19 | Expired |
| US6426248B2 | Process for forming power MOSFET device in float zone, non-epitaxial silicon | Electricity | 17 | Expired |
| US6919248B2 | Angled implant for shorter trench emitter | Electricity | 16 | Expired |
| US6603153B2 | Fast recovery diode and method for its manufacture | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6627961B1 | Hybrid IGBT and MOSFET for zero current at zero voltage | Electricity | 8 | Expired |
| US7485920B2 | Process to create buried heavy metal at selected depth | Electricity | 7 | Expired |
| US6683331B2 | Trench IGBT | Electricity | 6 | Expired |
| US6261874A | Fast recovery diode and method for its manufacture | Emerging Cross-Sectional Technologies | 6 | Expired |
| USH1412H | Sabot stiffener for kinetic energy projectile | General | 6 | Active |
| US6242288A | Anneal-free process for forming weak collector | Electricity | 6 | Expired |
| US6753580B1 | Diode with weak anode | Electricity | 4 | Expired |
| US7534666B2 | High voltage non punch through IGBT for switch mode power supplies | Emerging Cross-Sectional Technologies | 4 | Active |
| US9245985B2 | IGBT with buried emitter electrode | Electricity | 4 | Active |
| US9871128B2 | Bipolar semiconductor device with sub-cathode enhancement regions | Electricity | 3 | Active |
| US8314002B2 | Semiconductor device having increased switching speed | Electricity | 2 | Active |
| US6197649A | Process for manufacturing planar fast recovery diode using reduced number of masking steps | Electricity | 2 | Expired |
| USH932H | Projectile fin | General | 2 | Active |
| US7956419B2 | Trench IGBT with depletion stop layer | Electricity | 2 | Expired |
| US9859407B2 | IGBT having deep gate trench | Electricity | 2 | Active |
| US9299819B2 | Deep gate trench IGBT | Electricity | 2 | Active |
| US9496378B2 | IGBT with buried emitter electrode | Electricity | 1 | Active |
| US10164078B2 | Bipolar semiconductor device with multi-trench enhancement regions | Electricity | 1 | Active |
| US7335947B2 | Angled implant for shorter trench emitter | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.