Short-channel NFET device

US10121665B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Chi Dong Nguyen · Munich, DE
• Klaus Hempel · Dresden, DE

Key dates

• Filing date: Jul 11, 2017
• Grant date: Nov 6, 2018
• Expiry date: Jul 11, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device has an active region that includes a semiconductor layer. A transistor is formed in and above the active region, wherein the transistor has an implanted halo region that includes a halo dopant species and defines a halo dopant profile in the semiconductor layer. An implanted carbon species is positioned in the semiconductor layer, wherein the implanted carbon species defines a carbon species profile in the semiconductor layer that is substantially the same as the halo dopant profile of the implanted halo region in the semiconductor layer.