Inventor · Dresden, DE

Klaus Hempel

22Patents
5h-index
27Co-inventors
65Inventor score

Filing activity: Sep 19, 2006 → Jul 11, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US8048792B2 Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material Electricity 11 Active
US8247281B2 Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers Electricity 9 Active
US8232188B2 High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning Electricity 7 Active
US8367495B2 Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material Electricity 5 Active
US8298894B2 Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer Electricity 5 Active
US8735236B2 High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology Electricity 5 Active
US8652956B2 High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning Electricity 3 Active
US8664103B2 Metal gate stack formation for replacement gate technology Electricity 3 Active
US8420519B1 Methods for fabricating integrated circuits with controlled P-channel threshold voltage Electricity 3 Active
US7358150B2 Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same Electricity 3 Active
US8440559B2 Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer Electricity 2 Active
US8735270B2 Method for making high-K metal gate electrode structures by separate removal of placeholder materials Electricity 2 Active
US8158486B2 Trench isolation structure having different stress Electricity 1 Active
US8716120B2 High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology Electricity 1 Active
US8450163B2 Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach Electricity 1 Active
US9917016B2 Integrated circuits and methods of forming the same with effective dummy gate cap removal Electricity 0 Active
US8697530B2 Drain/source extension structure of a field effect transistor with reduced boron diffusion Electricity 0 Active
US8673759B2 Dry etch polysilicon removal for replacement gates Electricity 0 Active
US10121665B2 Short-channel NFET device Electricity 0 Active
US8357575B2 Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers Electricity 0 Active
US9735012B2 Short-channel nFET device Electricity 0 Active
US8324091B2 Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.