Methods of depositing metal films using metal oxyhalide precursors
US10121671B2 · kind B2 · utility
407Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 11, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Aug 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.