Interconnects fabricated by hydrofluorocarbon gas-assisted plasma etch
US10121676B2 · kind B2 · utility
1Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.