Patent · US Active

Wafer bonding system and method

US10121760B2 · kind B2 · utility

1Cited by
8References
34Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 21, 2014
Grant dateNov 6, 2018
Priority date
Expiry dateDec 30, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15787
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wafer bonding system and method using a combination of heat and a pneumatic force to bond two wafers held together in alignment. The wafers are heated via a non-contact, gaseous interface, thermal path between heating elements and the wafers. The pneumatic force is created by a pressure differential between a first pressure surrounding the two wafers and a second pressure, which is less than the first pressure, maintained between the two wafers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.