Defect reduction in seeded aluminum nitride crystal growth
US10125432B2 · kind B2 · utility
2Cited by
3References
23Claims
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Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.