Inventor · New York, NY, US

Kenneth E. Morgan

32Patents
11h-index
19Co-inventors
72Inventor score

Filing activity: Feb 24, 1994 → May 22, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US8323406B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 42 Active
US7638346B2 Nitride semiconductor heterostructures and related methods Electricity 35 Active
US7037838B2 Method for polishing a substrate surface Electricity 31 Expired
US8222650B2 Nitride semiconductor heterostructures and related methods Electricity 28 Active
US7087112B1 Nitride ceramics to mount aluminum nitride seed for sublimation growth Chemistry; Metallurgy 24 Expired
US8012257B2 Methods for controllable doping of aluminum nitride bulk crystals Chemistry; Metallurgy 22 Active
US8545629B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 20 Active
US8349077B2 Large aluminum nitride crystals with reduced defects and methods of making them Emerging Cross-Sectional Technologies 15 Active
US8834630B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 14 Active
US8580035B2 Large aluminum nitride crystals with reduced defects and methods of making them Emerging Cross-Sectional Technologies 14 Active
US8896020B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 13 Active
US9447519B2 Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them Emerging Cross-Sectional Technologies 6 Active
US5379470A Divan for use with fitted sheet Human Necessities 6 Expired
US9670591B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 4 Active
US7323414B2 Method for polishing a substrate surface Electricity 4 Expired
US6833240B2 Very low density lipoprotein receptor polymorphisms and uses therefor Chemistry; Metallurgy 3 Expired
US9447521B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 2 Active
US9771666B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 2 Active
US9624601B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 2 Active
US10125432B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 2 Active
US9034103B2 Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them Emerging Cross-Sectional Technologies 2 Active
US9970127B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 1 Active
US10392722B2 Defect reduction in seeded aluminum nitride crystal growth Emerging Cross-Sectional Technologies 1 Active
US11225731B2 Large aluminum nitride crystals with reduced defects and methods of making them Emerging Cross-Sectional Technologies 1 Active
US9598791B2 Large aluminum nitride crystals with reduced defects and methods of making them Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.