Charge sharing between memory cell plates using a conductive path
US10127963B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 26, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jul 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be used to charge a second ferroelectric memory cell by transferring charge from a plate of first ferroelectric memory cell to a plate of the second ferroelectric memory cell. In some examples, prior to the transfer of charge, the first ferroelectric memory cell may be selected for a first operation in which the first ferroelectric memory cell transitions from a charged state to a discharged state and the second ferroelectric memory cell may be selected for a second operation during which the second ferroelectric memory cell transitions from a discharged state to a charged state. The discharging of the first ferroelectric memory cell may be used to assist in charging the second ferroelectric memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.