Memory cell located pulse generator
US10127979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Mar 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/231
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to a memory cell and methods for generating a pulse within the memory cell. As such, a geometric arrangement of transistors is disclosed that allows the transistor pulse signal generator circuit to precharge both sides of the memory cell and, subsequently, bring opposite sides of the memory cell quickly to different voltages. The circuit and wiring fabrication provided, when combined with a related transistor manufacturing process, yields pulse generating logic at the memory cell to enable the formation of a well-defined pulse while fitting within the 4F2 footprint of the memory cell. As such, the speed and pulse shape requirements of PCM, MRAM, other such cross-point memory technologies, sensor arrays, and/or pixel displays may take advantage of the reduced RC circuitry delays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.