Patent · US Active

Fan-out package structure

US10128192B2 · kind B2 · utility

2Cited by
2References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 27, 2017
Grant dateNov 13, 2018
Priority date
Expiry dateApr 27, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/37001
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor package structure including a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto is provided. The RDL structure includes an inter-metal dielectric (IMD) layer and a first conductive layer disposed at a first layer-level of the IMD layer. A molding compound covers the first surface of the RDL structure. A first semiconductor die is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure. A plurality of bump structures is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.