Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors
US10128328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Oct 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. Based on the information about the cumulative dopant concentration and a dissociation rate of the hydrogen-related donors, a main temperature profile is determined for dissociating a defined portion of the hydrogen-related donors. The semiconductor substrate is subjected to a main heat treatment applying the main temperature profile to obtain, in the surface portion, a final total dopant concentration deviating from a target dopant concentration by not more than 15%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.