Semiconductor device with a buried junction layer having an interspersed pattern of doped and counter-doped materials
US10128330B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8181
Abstract
A semiconductor device having a novel buried junction architecture. The semiconductor device may have three terminals and a drift region between two of the terminals. The drift region includes an upper drift layer, a lower drift layer, and a buried junction layer between the upper and lower drift layers, wherein the upper and lower drift layers have a first type of doping. The buried junction layer comprises an interspersed pattern of a first material and a second material, the first material having a second type of doping opposite the first type of doping and the second material having the first type of doping and having a different doping concentration than the upper and lower drift layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.