Ralph N. Wall
23Patents
3h-index
27Co-inventors
63Inventor score
Filing activity: Oct 31, 2001 → Jul 19, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7612488B1 | Method to control BAW resonator top electrode edge during patterning | Emerging Cross-Sectional Technologies | 9 | Active |
| US8512800B2 | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters | Electricity | 5 | Active |
| US6855585B1 | Integrating multiple thin film resistors | Electricity | 5 | Expired |
| US8522411B1 | Method to control BAW resonator top electrode edge during patterning | Emerging Cross-Sectional Technologies | 3 | Active |
| US10727326B2 | Trench-gate insulated-gate bipolar transistors (IGBTs) | Electricity | 3 | Active |
| US9337178B2 | Method of forming an ESD device and structure therefor | Electricity | 3 | Active |
| US7600303B1 | BAW resonator bi-layer top electrode with zero etch undercut | Emerging Cross-Sectional Technologies | 2 | Active |
| US6919984B2 | Metal trim mirror for optimized thin film resistor laser trimming | Performing Operations; Transporting | 2 | Expired |
| US7737612B1 | BAW resonator bi-layer top electrode with zero etch undercut | Emerging Cross-Sectional Technologies | 1 | Active |
| US11056581B2 | Trench-gate insulated-gate bipolar transistors | Electricity | 1 | Active |
| US9111758B2 | Semiconductor component and method of manufacture | Electricity | 1 | Active |
| US8201311B1 | Process of making a BAW resonator bi-layer top electrode | Emerging Cross-Sectional Technologies | 1 | Active |
| US10128330B1 | Semiconductor device with a buried junction layer having an interspersed pattern of doped and counter-doped materials | Electricity | 0 | Active |
| US12087760B2 | Semiconductor devices and methods of manufacturing semiconductor devices | Electricity | 0 | Active |
| US10388726B2 | Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof | Electricity | 0 | Active |
| US11670706B2 | Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs) | Electricity | 0 | Active |
| US7567024B2 | Methods of contacting the top layer of a BAW resonator | Electricity | 0 | Active |
| US8952768B2 | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters | Electricity | 0 | Active |
| US10546948B1 | Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same | Electricity | 0 | Active |
| US12284834B2 | Semiconductor devices and methods of manufacturing semiconductor devices | Electricity | 0 | Active |
| US9564424B2 | ESD device and structure therefor | Electricity | 0 | Active |
| US12166068B2 | Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same | Electricity | 0 | Active |
| US7960200B2 | Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.