Patent · US Active

Gate-all-around field effect transistor having multiple threshold voltages

US10128347B2 · kind B2 · utility

6Cited by

4References

14Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Ruqiang Bao · Niskayuna, US
Michael A. Guillorn · Locke, US
Terence B. Hook · Jericho, US
Robert R. Robison · Colchester, US
Reinaldo Vega · Mahopac, US
Tenko Yamashita · Schenectady, US

Key dates

Filing date	Jan 4, 2017
Grant date	Nov 13, 2018
Priority date	—
Expiry date	Jan 4, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

One example of an apparatus includes a conducting channel region. The conducting channel region includes a plurality of epitaxially grown, in situ doped conducting channels arranged in a spaced apart relation relative to each other. A source positioned at a first end of the conducting channel region, and a drain positioned at a second end of the conducting channel region. A gate surrounds all sides of the conducting channel region and fills in spaces between the plurality of epitaxially grown, in situ doped conducting channels.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.