Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same
US10134583B2 · kind B2 · utility
3Cited by
17References
20Claims
0Family size
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Key dates
| Filing date | Nov 11, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Nov 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.