Patent · US Active

Recessed solid state apparatuses

US10134596B1 · kind B1 · utility

1Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 2017
Grant dateNov 20, 2018
Priority date
Expiry dateNov 21, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/693
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In some embodiments, an apparatus includes a first layer with a first surface and a second surface opposite to the first surface. The apparatus also includes a second layer having a third surface interfacing the second surface and a fourth surface opposite the third surface. The apparatus further includes a third layer having a fifth surface interfacing the fourth surface and a sixth surface opposite the fifth surface. The apparatus also includes a fourth layer having a seventh surface interfacing the sixth surface to form a heterojunction, which generates a two-dimensional electron gas channel formed in the fourth layer. Further, the apparatus includes a recess that extends from the first surface to the fifth surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.