Method for low temperature bonding of wafers
US10134607B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2015 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jul 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.