Laser processing method for cutting semiconductor wafer having metal layer formed thereon and laser processing device
US10134681B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a laser processing method for cutting a semiconductor wafer having a metal layer formed thereon and a laser processing device. The disclosed laser processing method transmits a plurality of laser beams, which propagate coaxially, to the semiconductor wafer, thereby forming focusing points in positions adjacent to a surface of the metal layer, which constitutes a boundary with the semiconductor wafer, and to one surface of the semiconductor wafer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.