Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof
US10141331B1 · kind B1 · utility
30Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | May 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, the alternating stack containing a memory array region and a terrace region. Memory stack structures containing a memory film and a vertical semiconductor channel extend through the memory array region of the alternating stack. Support pillar structures extending through the terrace region of the alternating stack. The support pillar structures have different heights from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.