Inventor · Yokkaichi, JP

Kensuke Yamaguchi

19Patents
9h-index
68Co-inventors
75Inventor score

Filing activity: Sep 4, 2002 → Jan 11, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10008570B2 Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device Electricity 51 Active
US10249640B2 Within-array through-memory-level via structures and method of making thereof Electricity 34 Active
US9305937B1 Bottom recess process for an outer blocking dielectric layer inside a memory opening Electricity 30 Active
US10014316B2 Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof Electricity 30 Active
US10141331B1 Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof Electricity 30 Active
US10269620B2 Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof Electricity 29 Active
US10608010B2 Three-dimensional memory device containing replacement contact via structures and method of making the same Electricity 23 Active
US9768270B2 Method of selectively depositing floating gate material in a memory device Electricity 19 Active
US10490569B2 Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings Electricity 14 Active
US9601508B2 Blocking oxide in memory opening integration scheme for three-dimensional memory structure Electricity 8 Active
US6901685B2 Method for drying washed objects Emerging Cross-Sectional Technologies 8 Expired
US10546870B2 Three-dimensional memory device containing offset column stairs and method of making the same Electricity 7 Active
US9553100B2 Selective floating gate semiconductor material deposition in a three-dimensional memory structure Electricity 7 Active
US6779534B2 Apparatus and method for drying washed objects Emerging Cross-Sectional Technologies 6 Expired
US9716101B2 Forming 3D memory cells after word line replacement Electricity 6 Active
US10916504B2 Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners Electricity 4 Active
US9368601B2 Method for forming oxide below control gate in vertical channel thin film transistor Electricity 0 Active
US12176203B2 Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant Electricity 0 Active
US12217965B2 Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.