Three dimensional capacitor

US10141393B1 · kind B1 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Mark T. Ramsbey · Sunnyvale, US
• Unsoon Kim · San Jose, US
• Shenqing Fang · Fremont, US
• Chun Chen · San Jose, US
• Kuo-Tung Chang · Saratoga, US

Key dates

• Filing date: Mar 3, 2016
• Grant date: Nov 27, 2018
• Expiry date: Mar 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/212

Abstract

Integrated capacitor structures and methods for fabricating same are provided. In an embodiment, the integrated capacitor structures exploit the capacitance that can be formed in a plane that is perpendicular to that of the substrate, resulting in three-dimensional capacitor structures. This allows for integrated capacitor structures with higher capacitance to be formed over relatively small substrate areas. Embodiments are suitable for use by charge pumps and can be fabricated to have more or less capacitance as desired by the application.