Inventor · Sunnyvale, CA, US

Mark T. Ramsbey

159Patents
30h-index
130Co-inventors
93Inventor score

Filing activity: Jun 7, 1995 → Sep 30, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6674138B1 Use of high-k dielectric materials in modified ONO structure for semiconductor devices Electricity 256 Expired
US6642573B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Emerging Cross-Sectional Technologies 174 Expired
US6912163B2 Memory device having high work function gate and method of erasing same Electricity 113 Expired
US6803272B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Electricity 108 Expired
US7115469B1 Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process Electricity 95 Expired
US6436768B1 Source drain implant during ONO formation for improved isolation of SONOS devices Electricity 94 Expired
US6541816B2 Planar structure for non-volatile memory devices Emerging Cross-Sectional Technologies 83 Expired
US6440797B1 Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory Emerging Cross-Sectional Technologies 79 Expired
US7018868B1 Disposable hard mask for memory bitline scaling Electricity 72 Expired
US6670241B1 Semiconductor memory with deuterated materials Electricity 66 Expired
US6639271B1 Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same Electricity 57 Expired
US6468865B1 Method of simultaneous formation of bitline isolation and periphery oxide Electricity 53 Expired
US6927145B1 Bitline hard mask spacer flow for memory cell scaling Electricity 52 Expired
US6433383B1 Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device Electricity 46 Expired
US6630383B1 Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer Electricity 46 Expired
US6630384B1 Method of fabricating double densed core gates in sonos flash memory Electricity 44 Expired
US6555436B2 Simultaneous formation of charge storage and bitline to wordline isolation Emerging Cross-Sectional Technologies 44 Expired
US6001713A Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device Electricity 42 Expired
US7033957B1 ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices Emerging Cross-Sectional Technologies 42 Expired
US6566194B1 Salicided gate for virtual ground arrays Electricity 42 Expired
US6958511B1 Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen Electricity 42 Expired
US5907781A Process for fabricating an integrated circuit with a self-aligned contact Electricity 41 Expired
US6617215B1 Memory wordline hard mask Electricity 39 Expired
US6653190B1 Flash memory with controlled wordline width Electricity 38 Expired
US6680509B1 Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory Emerging Cross-Sectional Technologies 38 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.