Negative capacitance matching in gate electrode structures
US10141414B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6211
Abstract
A gate electrode structure of a transistor element may be provided as a series connection of a negative capacitor portion and a floating electrode portion. When forming the negative capacitor portion, the value of the negative capacitance may be adjusted on the basis of two different mechanisms or manufacturing processes, thereby providing superior matching of the positive floating gate electrode portion and the negative capacitor portion. For example, the layer thickness of the ferroelectric material and the effective capacitive area of the dielectric material may be adjusted on the basis of independent manufacturing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.