Patent · US Active

Memory systems and memory programming methods

US10147486B2 · kind B2 · utility

7Cited by
37References
35Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 22, 2016
Grant dateDec 4, 2018
Priority date
Expiry dateFeb 22, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/79
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.