Turbulent flow spiral multi-zone precursor vaporizer
US10147597B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Sep 14, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45527
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vaporizer useful for depositing material on a semiconductor substrate in a chamber of a chemical vapor deposition apparatus includes a first inlet configured to receive an atomized precursor, a second inlet configured to receive carrier gas, a flow path in fluid communication with the first and second inlets and configured to effect turbulent flow of an atomized precursor and carrier gas stream supplied to the first and second inlets. A plurality of heating elements includes a first heater element configured to heat a first zone of the flow path and a second heater element configured to heat a second zone of the flow path. An outlet in fluid communication with the flow path is configured to deliver vapor produced from the atomized precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.