Substrate treatment apparatus, substrate treatment method, and etchant
US10147619B2 · kind B2 · utility
1Cited by
10References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 23, 2016 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Aug 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.