Semiconductor package for multiphase circuitry device

US10147703B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Macheiner · Kissing, DE
• Amirul Afiq Hud · Melaka City, MY
• Teck Sim Lee · Melaka City, MY
• Thomas Stoek · Buxtehude, DE
• Lee Shuang Wang · Melaka City, MY
• Chooi Mei Chong · Melaka City, MY
• Wei Hing Tan · Melaka City, MY

Key dates

• Filing date: Mar 24, 2017
• Grant date: Dec 4, 2018
• Expiry date: Mar 24, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/4903
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In some examples, a device includes a power supply element and a reference voltage element, wherein the reference voltage element is electrically isolated from the power supply element. The device further includes a high-side semiconductor die including at least two high-side transistors, wherein each high-side transistor of the at least two high-side transistors is electrically connected to the power supply element. The device also includes a low-side semiconductor die including at least two low-side transistors, wherein each low-side transistor of the at least two low-side transistors is electrically connected to the reference voltage element. The device includes at least two switching elements, wherein each switching element of the at least two switching elements is electrically connected to a respective high-side transistor of the at least two high-side transistors and to a respective low-side transistor of the at least two low-side transistors.