Semiconductor device and method for fabricating the same
US10147726B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 22, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Jun 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the following steps. First, a contact structure is formed in the insulating layer. Preferably, the contact structure includes a bottom portion in part of the insulating layer and a top portion on part of the bottom portion and extending to cover part of the insulating layer. Next, a dielectric layer is formed on the bottom portion and the top portion, part of the dielectric layer is removed to form a first opening exposing part of the top portion and part of the bottom portion, and a capacitor is formed in the first opening and contacting the pad portion and the contact portion directly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.