Semiconductor device and method for fabricating the same
US10147728B1 · kind B1 · utility
3Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Aug 15, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Aug 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first trench in a substrate; forming a first shallow trench isolation (STI) in the first trench; forming a first patterned mask on the substrate; and using the first patterned mask to remove part of the first STI for forming a second trench and remove part of the substrate for forming a third trench. Preferably, a bottom surface of the third trench is lower than a bottom surface of the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.