Semiconductor device and method for manufacturing semiconductor device
US10147738B2 · kind B2 · utility
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1References
16Claims
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Assignee
Inventor
Key dates
| Filing date | Jul 12, 2016 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Aug 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a first semiconductor body extends in a stacking direction of a stacked body through a first stacked unit and contacts a foundation layer. A plurality of contact vias extend in the stacking direction through an insulating layer and contact a plurality of terrace portions. A second semiconductor body extends in the stacking direction through a second stacked unit. An insulating film is provided between the foundation layer and a lower end portion of the second semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.