FinFET devices including recessed source/drain regions having optimized depths

US10147793B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Borna J. Obradovic · Leander, US
• Mark S. Rodder · Dallas, US
• Jorge A. Kittl · Round Rock, US
• Robert C. Bowen · Lucas, US
• Ryan M. Hatcher · Austin, US

Key dates

• Filing date: Mar 27, 2014
• Grant date: Dec 4, 2018
• Expiry date: Jun 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A finFET device can include a source/drain contact recess having an optimal depth beyond which an incremental decrease in a spreading resistance value for a horizontal portion of a source/drain contact in the recess provided by increased depth may be less than an incremental increase in total resistance due to the increase in the vertical portion of the source/drain contact at the increased depth.