Manufacturing method of epitaxial contact structure in semiconductor memory device
US10151048B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 29, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Nov 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of an epitaxial contact structure in a semiconductor memory device includes the following steps. A recess is formed in a semiconductor substrate by an etching process. An etching defect is formed in the recess by the etching process. An oxidation process is performed after the etching process. An oxide layer is formed in the recess by the oxidation process, and the etching defect is encompassed by the oxide layer. A cleaning process is performed after the oxidation process. The oxide layer and the etching defect encompassed by the oxide layer are removed by the cleaning process. An epitaxial growth process is performed to form an epitaxial contact structure in the recess after the cleaning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.