Plasma etching apparatus
US10153138B2 · kind B2 · utility
4Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Sep 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.